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| PD - 94328 IRFC460AB HEXFET(R) Power MOSFET Die in Wafer Form G S D 515V RDS(on)=0.299 5" Wafer Electrical Characteristics Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 515V Min. 0.299 Max. 2.3V Min., 3.9V Max. 5.0A Max. 100A Max. -55C to 150C Max. Test Conditions VGS = 0V, ID = 150A VGS = 10V, ID = 12A VDS = VGS , ID = 250A VDS = 500V, VGS = 0V, TJ = 25C VGS = 45V Mechanical Data Nominal Back Metal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer Thickness: Relevant Die Mechanical Drawing Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment: Recommended Die Attach Conditions: Referenced Package Part: Cr-NiV-Ag ( 0.1m-0.2m-0.25m ) Al with 1% Si (0.003 mm) 0.247" x 0.350" ( 6.26 mm x 8.88 mm ) 125 mm 0.375 mm 0.025 mm 01-5426 0.0033" 0.51mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300 C IRFP460A NOT ES : 1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 2. CONT ROLLING DIMENS ION: [INCH]. 3. LET T ER DES IGNAT ION: Die Outline 1.60 [.063] 1.24 [.049] S S = S OURCE G = GAT E S K = S OURCE KELVIN IS = CURRENT S ENS E E = EMITT ER 4. DIMENS IONAL TOLERANCES : 8.88 [.350] BONDING PADS : WIDT H & LENGT H < 0.635 T OLERANCE = + /- 0.013 < [.0250] T OLE RANCE = + /- [.0005] > 0.635 T OLERANCE = + /- 0.025 > [.0250] T OLE RANCE = + /- [.0010] < 1.270 T OLERANCE = + /- 0.102 < [.050] T OLERANCE = + /- [.004] > 1.270 T OLERANCE = + /- 0.203 > [.050] T OLERANCE = + /- [.008] G OVERALL DIE: WIDT H 0.62 [.024] 0.68 [.027] 6.26 [.247] & LENGT H 5. UNLES S OT HERWIS E NOT ED ALL DIE ARE GEN III www.irf.com 1 10/17/01 |
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